六)晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)正(zheng)向平(ping)(ping)均電(dian)(dian)(dian)(dian)壓(ya)降(jiang)VF正(zheng)向平(ping)(ping)均電(dian)(dian)(dian)(dian)壓(ya)降(jiang)VF也稱通態(tai)(tai)平(ping)(ping)均電(dian)(dian)(dian)(dian)壓(ya)或通態(tai)(tai)壓(ya)降(jiang)VT，是(shi)(shi)指(zhi)(zhi)(zhi)在規(gui)定(ding)(ding)(ding)環(huan)境溫(wen)度(du)和標準散熱條件下，當通過晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)的(de)(de)(de)(de)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)為(wei)額定(ding)(ding)(ding)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)時，其陽(yang)(yang)極(ji)(ji)(ji)(ji)A與(yu)陰(yin)極(ji)(ji)(ji)(ji)K之(zhi)(zhi)間(jian)電(dian)(dian)(dian)(dian)壓(ya)降(jiang)的(de)(de)(de)(de)平(ping)(ping)均值，通常為(wei)。(七)晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)門(men)(men)(men)(men)(men)極(ji)(ji)(ji)(ji)觸(chu)發(fa)電(dian)(dian)(dian)(dian)壓(ya)VGT門(men)(men)(men)(men)(men)極(ji)(ji)(ji)(ji)觸(chu)發(fa)VGT，是(shi)(shi)指(zhi)(zhi)(zhi)在規(gui)定(ding)(ding)(ding)的(de)(de)(de)(de)環(huan)境溫(wen)度(du)和晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)陽(yang)(yang)極(ji)(ji)(ji)(ji)與(yu)陰(yin)極(ji)(ji)(ji)(ji)之(zhi)(zhi)間(jian)為(wei)一(yi)(yi)定(ding)(ding)(ding)值正(zheng)向電(dian)(dian)(dian)(dian)壓(ya)的(de)(de)(de)(de)條件下，使晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)從阻(zu)斷狀態(tai)(tai)轉變為(wei)導通狀態(tai)(tai)所需(xu)要(yao)的(de)(de)(de)(de)**小門(men)(men)(men)(men)(men)極(ji)(ji)(ji)(ji)直流(liu)(liu)(liu)(liu)電(dian)(dian)(dian)(dian)壓(ya)，一(yi)(yi)般(ban)(ban)為(wei)。(八)晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)門(men)(men)(men)(men)(men)極(ji)(ji)(ji)(ji)觸(chu)發(fa)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)IGT門(men)(men)(men)(men)(men)極(ji)(ji)(ji)(ji)觸(chu)發(fa)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)IGT，是(shi)(shi)指(zhi)(zhi)(zhi)在規(gui)定(ding)(ding)(ding)環(huan)境溫(wen)度(du)和晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)陽(yang)(yang)極(ji)(ji)(ji)(ji)與(yu)陰(yin)極(ji)(ji)(ji)(ji)之(zhi)(zhi)間(jian)為(wei)一(yi)(yi)定(ding)(ding)(ding)值電(dian)(dian)(dian)(dian)壓(ya)的(de)(de)(de)(de)條件下，使晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)從阻(zu)斷狀態(tai)(tai)轉變為(wei)導通狀態(tai)(tai)所需(xu)要(yao)的(de)(de)(de)(de)**小門(men)(men)(men)(men)(men)極(ji)(ji)(ji)(ji)直流(liu)(liu)(liu)(liu)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)。(九)晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)門(men)(men)(men)(men)(men)極(ji)(ji)(ji)(ji)反(fan)向電(dian)(dian)(dian)(dian)壓(ya)門(men)(men)(men)(men)(men)極(ji)(ji)(ji)(ji)反(fan)向電(dian)(dian)(dian)(dian)壓(ya)是(shi)(shi)指(zhi)(zhi)(zhi)晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)門(men)(men)(men)(men)(men)極(ji)(ji)(ji)(ji)上所加的(de)(de)(de)(de)額定(ding)(ding)(ding)電(dian)(dian)(dian)(dian)壓(ya)，一(yi)(yi)般(ban)(ban)不(bu)超過10V。(十(shi))晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)維(wei)持(chi)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)IH維(wei)持(chi)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)IH是(shi)(shi)指(zhi)(zhi)(zhi)維(wei)持(chi)晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)導通的(de)(de)(de)(de)**小電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)。當正(zheng)向電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)小于(yu)IH時，導通的(de)(de)(de)(de)晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)會自(zi)動(dong)關(guan)斷。(十(shi)一(yi)(yi))晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)斷態(tai)(tai)重(zhong)(zhong)(zhong)復(fu)峰值電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)IDR斷態(tai)(tai)重(zhong)(zhong)(zhong)復(fu)峰值電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)IDR，是(shi)(shi)指(zhi)(zhi)(zhi)晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)在斷態(tai)(tai)下的(de)(de)(de)(de)正(zheng)向比(bi)較大(da)平(ping)(ping)均漏電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)值，一(yi)(yi)般(ban)(ban)小于(yu)100μA(十(shi)二(er))晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)反(fan)向重(zhong)(zhong)(zhong)復(fu)峰值電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)IRRM反(fan)向重(zhong)(zhong)(zhong)復(fu)峰值電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)IRRM，是(shi)(shi)指(zhi)(zhi)(zhi)晶(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)在關(guan)斷狀態(tai)(tai)下的(de)(de)(de)(de)反(fan)向比(bi)較大(da)漏電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)值，一(yi)(yi)般(ban)(ban)小于(yu)100μA。正(zheng)高電(dian)(dian)(dian)(dian)氣具(ju)備雄厚(hou)的(de)(de)(de)(de)實(shi)(shi)力和豐富的(de)(de)(de)(de)實(shi)(shi)踐經(jing)驗。連云(yun)港行車(che)三相(xiang)交流(liu)(liu)(liu)(liu)調壓(ya)模塊

大中(zhong)小電(dian)(dian)力半導體可控硅普通晶閘(zha)管(guan)模(mo)塊MTC25A2015-06-21共(gong)同(tong)成長8...展開(kai)全文一、產(chan)品(pin)特點：1、芯片與底板電(dian)(dian)氣絕緣，2500V交流(liu)(liu)(liu)電(dian)(dian)壓(ya)；2、國際標準封裝；3、真空+充氫保護焊接(jie)技(ji)(ji)術(shu)；4、壓(ya)接(jie)結(jie)(jie)構(gou)，優良的溫(wen)度特性和(he)功率循(xun)環能力；5、輸入-輸出端(duan)之間(jian)隔離耐壓(ya)≥2500VAC；6、200A以(yi)下模(mo)塊皆為強迫風冷(leng)，300A以(yi)上模(mo)塊，既可選(xuan)用(yong)風冷(leng)，也可選(xuan)用(yong)水冷(leng)；7、安裝簡單，使用(yong)維(wei)修(xiu)方便，體積小，重(zhong)量(liang)輕。二、型(xing)號(hao)說(shuo)明(ming)(ming)：三、技(ji)(ji)術(shu)參數(shu)(shu)：型(xing)號(hao)通態(tai)(tai)平均電(dian)(dian)流(liu)(liu)(liu)反向斷態(tai)(tai)重(zhong)復峰(feng)值(zhi)電(dian)(dian)壓(ya)通態(tai)(tai)峰(feng)值(zhi)電(dian)(dian)壓(ya)通態(tai)(tai)峰(feng)值(zhi)電(dian)(dian)流(liu)(liu)(liu)正反向重(zhong)復峰(feng)值(zhi)電(dian)(dian)流(liu)(liu)(liu)觸發電(dian)(dian)流(liu)(liu)(liu)觸發電(dian)(dian)壓(ya)維(wei)持電(dian)(dian)流(liu)(liu)(liu)斷態(tai)(tai)電(dian)(dian)壓(ya)臨(lin)界上升率通態(tai)(tai)電(dian)(dian)流(liu)(liu)(liu)臨(lin)界上升率比較(jiao)高額定結(jie)(jie)溫(wen)絕緣電(dian)(dian)壓(ya)重(zhong)量(liang)It(AV)VdrmVrrmVtmItmIdrmIrrmIgtIhdv/dtdi/dtTjmVisoWeightTypeAVVAmAmAVmAV/μsA/μs℃V(AC)gMTx25AMTx40A41252500MTx55A55400-2500四、外(wai)形尺寸及電(dian)(dian)路聯(lian)結(jie)(jie)形式(shi)：五、產(chan)品(pin)應用(yong)：1、交直流(liu)(liu)(liu)電(dian)(dian)機(ji)控制(zhi)；2、各種整流(liu)(liu)(liu)電(dian)(dian)源(yuan)；3、工(gong)業(ye)加熱控制(zhi)；4、調光；5、無觸點開(kai)關(guan)；6、電(dian)(dian)機(ji)軟起動；7、靜止無功補嘗(chang)；8、電(dian)(dian)焊機(ji)；9、變頻器；10、UPS電(dian)(dian)源(yuan)；11、電(dian)(dian)池充放電(dian)(dian)。說(shuo)明(ming)(ming)：，Lgt,Vgt,Ih,Vtm,Viso均為25下的調試值(zhi)，表中(zhong)其它參數(shu)(shu)皆jm下的測(ce)試值(zhi);，在50HZ頻率下，I2t(10ms)=(A2S)。菏澤雙(shuang)向晶閘(zha)管(guan)模(mo)塊配件正高電(dian)(dian)氣具有一支經驗豐富、技(ji)(ji)術(shu)力量(liang)過硬的專業(ye)技(ji)(ji)術(shu)人才管(guan)理團(tuan)隊。

晶(jing)閘(zha)(zha)管模(mo)塊通常包(bao)含一個或多個晶(jing)閘(zha)(zha)管，并且還(huan)可能包(bao)含二極管等其(qi)他半(ban)導(dao)(dao)體(ti)(ti)設(she)(she)(she)備。它們具有一個電(dian)(dian)(dian)(dian)(dian)氣(qi)隔離(li)基板，這(zhe)樣(yang)可以使其(qi)他元(yuan)件安裝在同(tong)一散熱(re)片上。這(zhe)樣(yang)可簡化系統(tong)安裝、包(bao)裝和(he)冷卻。晶(jing)閘(zha)(zha)管模(mo)塊的(de)工(gong)作(zuo)(zuo)原理(li)是什么？晶(jing)閘(zha)(zha)管模(mo)塊可用(yong)作(zuo)(zuo)開關，在持(chi)續電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)達到(dao)設(she)(she)(she)定值時開啟。它們持(chi)續導(dao)(dao)電(dian)(dian)(dian)(dian)(dian)（接通），直到(dao)設(she)(she)(she)備電(dian)(dian)(dian)(dian)(dian)壓反向為止。這(zhe)些模(mo)塊由(you)P和(he)N（正和(he)負）型半(ban)導(dao)(dao)體(ti)(ti)交替層疊，形成四(si)層半(ban)導(dao)(dao)體(ti)(ti)材(cai)料。它們設(she)(she)(she)計用(yong)于中(zhong)、高(gao)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)電(dian)(dian)(dian)(dian)(dian)源(yuan)的(de)控制應(ying)用(yong)，功(gong)能與硅控制設(she)(she)(she)備相同(tong)。晶(jing)閘(zha)(zha)管模(mo)塊可循環額定電(dian)(dian)(dian)(dian)(dian)壓和(he)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)較高(gao)的(de)大功(gong)率電(dian)(dian)(dian)(dian)(dian)源(yuan)。晶(jing)閘(zha)(zha)管模(mo)塊的(de)應(ying)用(yong)晶(jing)閘(zha)(zha)管模(mo)塊可用(yong)于各(ge)種應(ying)用(yong)，其(qi)中(zhong)包(bao)括：交流(liu)(liu)電(dian)(dian)(dian)(dian)(dian)動(dong)機驅動(dong)電(dian)(dian)(dian)(dian)(dian)源(yuan)熱(re)/溫度控制（例如化學過程和(he)大型商(shang)業烤箱(xiang)）電(dian)(dian)(dian)(dian)(dian)焊機照明控制大型IGBT前端電(dian)(dian)(dian)(dian)(dian)路電(dian)(dian)(dian)(dian)(dian)池(chi)充電(dian)(dian)(dian)(dian)(dian)器直流(liu)(liu)制動(dong)橋(qiao)接電(dian)(dian)(dian)(dian)(dian)路。

硒(xi)(xi)(xi)堆(dui)(dui)的(de)(de)特(te)點是(shi)(shi)其(qi)動作(zuo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)和溫度有(you)關，溫度越低(di)耐壓(ya)(ya)(ya)(ya)越高(gao)(gao)；另外是(shi)(shi)硒(xi)(xi)(xi)堆(dui)(dui)具有(you)自恢(hui)復(fu)特(te)性(xing)，能多次(ci)使用，當(dang)過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)動作(zuo)后硒(xi)(xi)(xi)基(ji)片上(shang)的(de)(de)灼傷孔被溶(rong)化的(de)(de)硒(xi)(xi)(xi)重(zhong)新覆蓋(gai)，又(you)重(zhong)新恢(hui)復(fu)其(qi)工作(zuo)特(te)性(xing)。壓(ya)(ya)(ya)(ya)敏電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)是(shi)(shi)以氧化鋅為(wei)基(ji)體的(de)(de)金屬氧化物非線(xian)性(xing)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)，其(qi)結構為(wei)兩個電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極之間(jian)填充的(de)(de)粒(li)徑為(wei)10~50μm的(de)(de)不規(gui)則(ze)的(de)(de)ZNO微結晶，結晶粒(li)間(jian)是(shi)(shi)厚約1μm的(de)(de)氧化鉍粒(li)界層(ceng)(ceng)(ceng)。這個粒(li)界層(ceng)(ceng)(ceng)在正(zheng)常電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)下(xia)呈高(gao)(gao)阻(zu)狀(zhuang)態，只有(you)很小的(de)(de)漏電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流，其(qi)值小于100μA。當(dang)加(jia)上(shang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)時(shi)，引起了電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子雪崩(beng)，粒(li)界層(ceng)(ceng)(ceng)迅(xun)速(su)變成低(di)阻(zu)抗，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流迅(xun)速(su)增(zeng)(zeng)加(jia)，泄漏了能量，了過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)，從而使晶閘管得到(dao)保護。浪(lang)涌(yong)過(guo)后，粒(li)界層(ceng)(ceng)(ceng)又(you)恢(hui)復(fu)為(wei)高(gao)(gao)阻(zu)態。壓(ya)(ya)(ya)(ya)敏電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)的(de)(de)特(te)性(xing)主要由下(xia)面幾個參數來表示(shi)。標(biao)稱(cheng)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)：指壓(ya)(ya)(ya)(ya)敏電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)流過(guo)1mA直流電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流時(shi)，其(qi)兩端的(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)值。通(tong)流容(rong)量：是(shi)(shi)用前沿(yan)8微秒、波(bo)(bo)寬(kuan)20微秒的(de)(de)波(bo)(bo)形沖擊(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流，每(mei)隔5分鐘沖擊(ji)1次(ci)，共(gong)沖擊(ji)10次(ci)，標(biao)稱(cheng)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)變化在-10[[[%]]]以內的(de)(de)比較大沖擊(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流值來表示(shi)。因為(wei)正(zheng)常的(de)(de)壓(ya)(ya)(ya)(ya)敏電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)粒(li)界層(ceng)(ceng)(ceng)只有(you)一定大小的(de)(de)放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)容(rong)量和放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)次(ci)數，標(biao)稱(cheng)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)值不僅會(hui)隨著(zhu)放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)次(ci)數增(zeng)(zeng)多而下(xia)降(jiang)(jiang)，而且(qie)也隨著(zhu)放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流幅值的(de)(de)增(zeng)(zeng)大而下(xia)降(jiang)(jiang)，當(dang)大到(dao)某一電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流時(shi)，標(biao)稱(cheng)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)下(xia)降(jiang)(jiang)到(dao)0，壓(ya)(ya)(ya)(ya)敏電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻(zu)出現穿孔，甚至炸裂(lie)；因此必須限定通(tong)流容(rong)量。正(zheng)高(gao)(gao)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)氣以更(geng)(geng)積極的(de)(de)態度，更(geng)(geng)新、更(geng)(geng)好的(de)(de)產品，更(geng)(geng)質量的(de)(de)服務(wu)，迎接(jie)挑戰。

晶閘管模塊產品(pin)特點：

1、芯片與基板電絕緣，電壓2500V；

2、 國際標準(zhun)封裝(zhuang)；

3、壓(ya)接結(jie)構，優(you)良的溫度特性和動(dong)力循環(huan)能力；

4、輸入-輸出端之(zhi)間隔離耐壓≥2500VAC；

5、200A以(yi)下為(wei)強(qiang)制風(feng)冷，300A以(yi)上模塊(kuai)，可(ke)以(yi)選擇(ze)風(feng)冷或水冷。

6、安裝簡(jian)單，使用維(wei)修方便，體積小(xiao)，重量輕。

典型應用：

直(zhi)流(liu)電(dian)源(yuan)、交流(liu)開關(guan)、焊接設備、電(dian)機(ji)控(kong)制、調(diao)光、變頻器、UPS電(dian)源(yuan)、無(wu)觸點開關(guan)、電(dian)機(ji)軟起(qi)動、蓄電(dian)池充放電(dian)、靜(jing)態無(wu)功功率(lv)補償、工業加熱(re)控(kong)制、各種整(zheng)流(liu)電(dian)源(yuan)。正(zheng)高(gao)電(dian)氣公司(si)地(di)理位置優越(yue)，擁(yong)有完善(shan)的(de)服務(wu)體系(xi)。日照雙向晶閘管模塊組件

正(zheng)高電氣公司在多年積(ji)累的客戶好(hao)口碑下，不但在產品(pin)規格配(pei)套方面占據優勢。連云港行車三(san)相交流(liu)調壓(ya)模塊

750V通(tong)態(tai)平均(jun)電(dian)(dian)(dian)(dian)流(liu)IT（AV）：5A比(bi)(bi)較(jiao)大(da)通(tong)態(tai)電(dian)(dian)(dian)(dian)壓VT：3V（IT=30A）比(bi)(bi)較(jiao)大(da)反(fan)向(xiang)(xiang)導(dao)通(tong)電(dian)(dian)(dian)(dian)壓VTR：<比(bi)(bi)較(jiao)大(da)門極(ji)(ji)觸發(fa)電(dian)(dian)(dian)(dian)壓VGT:4V比(bi)(bi)較(jiao)大(da)門極(ji)(ji)觸發(fa)電(dian)(dian)(dian)(dian)流(liu)IGT:40mA關(guan)斷(duan)時間(jian)toff:μs通(tong)態(tai)電(dian)(dian)(dian)(dian)壓臨界上升率(lv)(lv)du/dt:120V/μs通(tong)態(tai)浪涌電(dian)(dian)(dian)(dian)流(liu)ITSM:80A利用(yong)(yong)萬(wan)(wan)用(yong)(yong)表(biao)(biao)(biao)和(he)(he)(he)兆(zhao)歐(ou)表(biao)(biao)(biao)可以檢(jian)查逆導(dao)晶閘管(guan)的(de)好壞。測(ce)試(shi)內容主要分三(san)項(xiang)：1．檢(jian)查逆導(dao)性選擇萬(wan)(wan)用(yong)(yong)表(biao)(biao)(biao)R×1檔(dang)，黑表(biao)(biao)(biao)筆接(jie)K極(ji)(ji)，紅表(biao)(biao)(biao)筆接(jie)A極(ji)(ji)（參見圖(tu)3(a)），電(dian)(dian)(dian)(dian)阻(zu)(zu)值(zhi)應為5～10Ω。若(ruo)阻(zu)(zu)值(zhi)為零，證明內部(bu)(bu)二極(ji)(ji)管(guan)短路；電(dian)(dian)(dian)(dian)阻(zu)(zu)為無窮(qiong)大(da)，說明二極(ji)(ji)管(guan)開路。2．測(ce)量(liang)正(zheng)向(xiang)(xiang)直(zhi)流(liu)轉折電(dian)(dian)(dian)(dian)壓V（BO）按(an)照（b）圖(tu)接(jie)好電(dian)(dian)(dian)(dian)路，再按(an)額定轉速(su)搖兆(zhao)歐(ou)表(biao)(biao)(biao)，使(shi)RCT正(zheng)向(xiang)(xiang)擊穿，由直(zhi)流(liu)電(dian)(dian)(dian)(dian)壓表(biao)(biao)(biao)上讀出(chu)V（BO）值(zhi)。3．檢(jian)查觸發(fa)能力實(shi)例(li)：使(shi)用(yong)(yong)500型(xing)萬(wan)(wan)用(yong)(yong)表(biao)(biao)(biao)和(he)(he)(he)ZC25-3型(xing)兆(zhao)歐(ou)表(biao)(biao)(biao)測(ce)量(liang)一只S3900MF型(xing)逆導(dao)晶閘管(guan)。依次選擇R×1k、R×100、R×10和(he)(he)(he)R×1檔(dang)測(ce)量(liang)A-K極(ji)(ji)間(jian)反(fan)向(xiang)(xiang)電(dian)(dian)(dian)(dian)阻(zu)(zu)，同時用(yong)(yong)讀取電(dian)(dian)(dian)(dian)壓法求出(chu)出(chu)內部(bu)(bu)二極(ji)(ji)管(guan)的(de)反(fan)向(xiang)(xiang)導(dao)通(tong)電(dian)(dian)(dian)(dian)壓VTR（實(shi)際是(shi)二極(ji)(ji)管(guan)正(zheng)向(xiang)(xiang)電(dian)(dian)(dian)(dian)壓VF）。再用(yong)(yong)兆(zhao)歐(ou)表(biao)(biao)(biao)和(he)(he)(he)萬(wan)(wan)用(yong)(yong)表(biao)(biao)(biao)500VDC檔(dang)測(ce)得(de)V（BO）值(zhi)。全(quan)部(bu)(bu)數據(ju)整理成(cheng)表(biao)(biao)(biao)1。由此證明被測(ce)RCT質量(liang)良好。注意事項(xiang)：（1）S3900MF的(de)VTR<，宜(yi)選R×1檔(dang)測(ce)量(liang)。（2）若(ruo)再用(yong)(yong)讀取電(dian)(dian)(dian)(dian)流(liu)法求出(chu)ITR值(zhi)，還可以繪(hui)制反(fan)向(xiang)(xiang)伏安特性。①一般小功率(lv)(lv)晶閘管(guan)不需加散熱(re)片，但應遠(yuan)離發(fa)熱(re)元件。連云港行車(che)三(san)相交流(liu)調壓模(mo)塊

淄(zi)博正(zheng)高電(dian)氣(qi)有(you)(you)限公司匯集了大量(liang)的(de)(de)(de)優秀人(ren)才，集企(qi)(qi)業奇思(si)，創(chuang)經濟奇跡(ji)，一(yi)(yi)(yi)群有(you)(you)夢(meng)想(xiang)有(you)(you)朝氣(qi)的(de)(de)(de)團(tuan)隊不斷在前(qian)進(jin)(jin)的(de)(de)(de)道(dao)路上(shang)開創(chuang)新(xin)天地(di)，繪畫新(xin)藍圖，在山(shan)東省等地(di)區(qu)的(de)(de)(de)電(dian)子元器(qi)件中始終保持良好的(de)(de)(de)信(xin)譽，信(xin)奉(feng)著“爭取每一(yi)(yi)(yi)個客戶不容易，失去每一(yi)(yi)(yi)個用戶很簡單”的(de)(de)(de)理(li)念，市場是企(qi)(qi)業的(de)(de)(de)方向，質量(liang)是企(qi)(qi)業的(de)(de)(de)生命，在公司有(you)(you)效方針的(de)(de)(de)領導下(xia)，全體上(shang)下(xia)，團(tuan)結一(yi)(yi)(yi)致，共同進(jin)(jin)退，**協力把各方面(mian)工作(zuo)做得更(geng)好，努力開創(chuang)工作(zuo)的(de)(de)(de)新(xin)局(ju)面(mian)，公司的(de)(de)(de)新(xin)高度(du)，未(wei)來淄(zi)博正(zheng)高電(dian)氣(qi)供應和您一(yi)(yi)(yi)起奔向更(geng)美(mei)好的(de)(de)(de)未(wei)來，即使現在有(you)(you)一(yi)(yi)(yi)點小(xiao)小(xiao)的(de)(de)(de)成(cheng)(cheng)績，也不足以驕傲(ao)，過去的(de)(de)(de)種種都已成(cheng)(cheng)為(wei)昨日我們只有(you)(you)總結經驗，才能繼續上(shang)路，讓我們一(yi)(yi)(yi)起點燃新(xin)的(de)(de)(de)希望，放飛新(xin)的(de)(de)(de)夢(meng)想(xiang)！

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