載流(liu)(liu)(liu)(liu)子(zi)雪崩(beng)式地增加(jia)，致使電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)急劇(ju)增加(jia)，這種(zhong)(zhong)(zhong)擊穿稱(cheng)為雪崩(beng)擊穿。無論(lun)哪(na)種(zhong)(zhong)(zhong)擊穿，若(ruo)對(dui)其電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)不(bu)加(jia)限制，都(dou)可能(neng)(neng)造成PN結長久性(xing)損(sun)壞(huai)。[5]二(er)(er)(er)(er)(er)(er)極(ji)(ji)管反(fan)(fan)(fan)向(xiang)(xiang)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)反(fan)(fan)(fan)向(xiang)(xiang)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)是(shi)指(zhi)二(er)(er)(er)(er)(er)(er)極(ji)(ji)管在常(chang)溫（25℃）和高(gao)(gao)(gao)反(fan)(fan)(fan)向(xiang)(xiang)電(dian)(dian)(dian)(dian)壓作(zuo)用過(guo)(guo)二(er)(er)(er)(er)(er)(er)極(ji)(ji)管的(de)反(fan)(fan)(fan)向(xiang)(xiang)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)。反(fan)(fan)(fan)向(xiang)(xiang)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)越小，管子(zi)的(de)單方(fang)向(xiang)(xiang)導電(dian)(dian)(dian)(dian)性(xing)能(neng)(neng)越好。值得注意的(de)是(shi)反(fan)(fan)(fan)向(xiang)(xiang)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)與溫度(du)有著密切的(de)關系(xi)，大約溫度(du)每(mei)升(sheng)(sheng)高(gao)(gao)(gao)10℃，反(fan)(fan)(fan)向(xiang)(xiang)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)增大一倍。例如2AP1型鍺二(er)(er)(er)(er)(er)(er)極(ji)(ji)管，在25℃時(shi)(shi)反(fan)(fan)(fan)向(xiang)(xiang)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)若(ruo)為250uA，溫度(du)升(sheng)(sheng)高(gao)(gao)(gao)到(dao)35℃，反(fan)(fan)(fan)向(xiang)(xiang)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)將(jiang)上升(sheng)(sheng)到(dao)500uA，依此類推，在75℃時(shi)(shi)，它的(de)反(fan)(fan)(fan)向(xiang)(xiang)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)已(yi)達8mA，不(bu)失去了單方(fang)向(xiang)(xiang)導電(dian)(dian)(dian)(dian)特性(xing)，還會使管子(zi)過(guo)(guo)熱而損(sun)壞(huai)。又如，2CP10型硅二(er)(er)(er)(er)(er)(er)極(ji)(ji)管，25℃時(shi)(shi)反(fan)(fan)(fan)向(xiang)(xiang)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)為5uA，溫度(du)升(sheng)(sheng)高(gao)(gao)(gao)到(dao)75℃時(shi)(shi)，反(fan)(fan)(fan)向(xiang)(xiang)電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)也不(bu)過(guo)(guo)160uA。故硅二(er)(er)(er)(er)(er)(er)極(ji)(ji)管比(bi)鍺二(er)(er)(er)(er)(er)(er)極(ji)(ji)管在高(gao)(gao)(gao)溫下具有較(jiao)好的(de)穩定性(xing)。[4]二(er)(er)(er)(er)(er)(er)極(ji)(ji)管動(dong)態(tai)電(dian)(dian)(dian)(dian)阻(zu)二(er)(er)(er)(er)(er)(er)極(ji)(ji)管特性(xing)曲線靜態(tai)工作(zuo)點附近電(dian)(dian)(dian)(dian)壓的(de)變化(hua)與相應電(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)的(de)變化(hua)量(liang)之(zhi)比(bi)。[4]二(er)(er)(er)(er)(er)(er)極(ji)(ji)管電(dian)(dian)(dian)(dian)壓溫度(du)系(xi)數電(dian)(dian)(dian)(dian)壓溫度(du)系(xi)數指(zhi)溫度(du)每(mei)升(sheng)(sheng)高(gao)(gao)(gao)一攝氏(shi)度(du)時(shi)(shi)的(de)穩定電(dian)(dian)(dian)(dian)壓的(de)相對(dui)變化(hua)量(liang)。[4]二(er)(er)(er)(er)(er)(er)極(ji)(ji)管高(gao)(gao)(gao)工作(zuo)頻(pin)率(lv)高(gao)(gao)(gao)工作(zuo)頻(pin)率(lv)是(shi)二(er)(er)(er)(er)(er)(er)極(ji)(ji)管工作(zuo)的(de)上限頻(pin)率(lv)。因(yin)二(er)(er)(er)(er)(er)(er)極(ji)(ji)管與PN結一樣，其結電(dian)(dian)(dian)(dian)容由勢壘(lei)電(dian)(dian)(dian)(dian)容組成。所(suo)以高(gao)(gao)(gao)工作(zuo)頻(pin)率(lv)的(de)值主要取(qu)決于(yu)PN結結電(dian)(dian)(dian)(dian)容的(de)大小。若(ruo)是(shi)超過(guo)(guo)此值。則單向(xiang)(xiang)導電(dian)(dian)(dian)(dian)性(xing)將(jiang)受影響。可控硅(Silicon Controlled Rectifier) 簡稱(cheng)SCR，是(shi)一種(zhong)(zhong)(zhong)大功率(lv)電(dian)(dian)(dian)(dian)器元件，也稱(cheng)晶(jing)閘管。甘(gan)肅半導體(ti)igbt可控硅（晶(jing)閘管）semikron西門康全(quan)新(xin)原裝現貨

[1]維持(chi)電流(liu)(liu)I：是指晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)維持(chi)導(dao)(dao)通(tong)(tong)所必需(xu)(xu)的(de)(de)(de)(de)**小(xiao)電流(liu)(liu)，一般為幾(ji)十到幾(ji)百毫(hao)安。IH與結溫(wen)有關，結溫(wen)越(yue)高，則(ze)I越(yue)小(xiao)。擎住(zhu)電流(liu)(liu)I：是晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)剛從(cong)斷態(tai)(tai)(tai)轉(zhuan)入通(tong)(tong)態(tai)(tai)(tai)并移除(chu)觸(chu)(chu)(chu)發信號后，能維持(chi)導(dao)(dao)通(tong)(tong)所需(xu)(xu)的(de)(de)(de)(de)**小(xiao)電流(liu)(liu)。對同(tong)一晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)來(lai)說，通(tong)(tong)常I約為I的(de)(de)(de)(de)2～4倍(bei)。[1]浪涌電流(liu)(liu)I：浪涌電流(liu)(liu)是指由于電路(lu)異(yi)常情況引起的(de)(de)(de)(de)使結溫(wen)超過(guo)(guo)(guo)額定(ding)(ding)結溫(wen)的(de)(de)(de)(de)不重復性(xing)**大(da)正(zheng)向過(guo)(guo)(guo)載電流(liu)(liu)。斷態(tai)(tai)(tai)電壓(ya)臨(lin)界上(shang)升率(lv)(lv)du/dt：是指在(zai)額定(ding)(ding)結溫(wen)、門(men)(men)(men)極(ji)開路(lu)的(de)(de)(de)(de)情況下，不能使晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)從(cong)斷態(tai)(tai)(tai)到通(tong)(tong)態(tai)(tai)(tai)轉(zhuan)換的(de)(de)(de)(de)外加電壓(ya)**大(da)上(shang)升率(lv)(lv)。通(tong)(tong)態(tai)(tai)(tai)電流(liu)(liu)臨(lin)界上(shang)升率(lv)(lv)di/dt：指在(zai)規定(ding)(ding)條件下，晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)能承受的(de)(de)(de)(de)**大(da)通(tong)(tong)態(tai)(tai)(tai)電流(liu)(liu)上(shang)升率(lv)(lv)。如果di/dt過(guo)(guo)(guo)大(da)，在(zai)晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)剛開通(tong)(tong)時會有很(hen)大(da)的(de)(de)(de)(de)電流(liu)(liu)集中(zhong)在(zai)門(men)(men)(men)極(ji)附近的(de)(de)(de)(de)小(xiao)區域內(nei)，從(cong)而(er)造成(cheng)局部(bu)過(guo)(guo)(guo)熱而(er)使晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)損(sun)壞。[1]觸(chu)(chu)(chu)發技術晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)觸(chu)(chu)(chu)發電路(lu)的(de)(de)(de)(de)作用是產生符合要(yao)求的(de)(de)(de)(de)門(men)(men)(men)極(ji)觸(chu)(chu)(chu)發脈(mo)(mo)沖(chong)，使得(de)晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)在(zai)需(xu)(xu)要(yao)時正(zheng)常開通(tong)(tong)。晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)觸(chu)(chu)(chu)發電路(lu)必須滿足(zu)以下幾(ji)點要(yao)求：①觸(chu)(chu)(chu)發脈(mo)(mo)沖(chong)的(de)(de)(de)(de)寬度應(ying)足(zu)夠寬使得(de)晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)可靠導(dao)(dao)通(tong)(tong)；②觸(chu)(chu)(chu)發脈(mo)(mo)沖(chong)應(ying)有足(zu)夠的(de)(de)(de)(de)幅度，對一些溫(wen)度較低的(de)(de)(de)(de)場合，脈(mo)(mo)沖(chong)電流(liu)(liu)的(de)(de)(de)(de)幅度應(ying)增(zeng)大(da)為器件**大(da)觸(chu)(chu)(chu)發電流(liu)(liu)的(de)(de)(de)(de)3～5倍(bei)，脈(mo)(mo)沖(chong)的(de)(de)(de)(de)陡度也需(xu)(xu)要(yao)增(zeng)加，一般需(xu)(xu)達1～2A/μs；③所提供(gong)的(de)(de)(de)(de)觸(chu)(chu)(chu)發脈(mo)(mo)沖(chong)應(ying)不超過(guo)(guo)(guo)晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)門(men)(men)(men)極(ji)的(de)(de)(de)(de)電壓(ya)、電流(liu)(liu)和(he)功(gong)率(lv)(lv)定(ding)(ding)額。山(shan)西功(gong)率(lv)(lv)半導(dao)(dao)體igbt可控(kong)硅（晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)）Mitsubishi三菱全新原(yuan)裝現(xian)貨晶(jing)(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)管(guan)(guan)(guan)的(de)(de)(de)(de)工作特性(xing)可以概(gai)括(kuo)為∶正(zheng)向阻(zu)斷，觸(chu)(chu)(chu)發導(dao)(dao)通(tong)(tong)，反向阻(zu)斷。

定義(yi)/晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)編(bian)輯(ji)晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)導(dao)通(tong)條件(jian)(jian)為(wei)：加正向電壓(ya)且(qie)門(men)極(ji)(ji)有(you)觸(chu)發電流(liu)；其(qi)派生器件(jian)(jian)有(you)：快速晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)，雙向晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)，逆導(dao)晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)，光(guang)控晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)等。它是一種大(da)功率開(kai)(kai)關型半導(dao)體(ti)器件(jian)(jian)，在(zai)電路中(zhong)(zhong)用文(wen)字符(fu)號為(wei)“V”、“VT”表示(shi)（舊標準(zhun)中(zhong)(zhong)用字母“SCR”表示(shi)）。晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)（Thyristor）是一種開(kai)(kai)關元(yuan)件(jian)(jian)，能(neng)在(zai)高(gao)電壓(ya)、大(da)電流(liu)條件(jian)(jian)下工作，并且(qie)其(qi)工作過(guo)程可以控制、被應用于(yu)可控整流(liu)、交流(liu)調(diao)壓(ya)、無(wu)觸(chu)點(dian)電子開(kai)(kai)關、逆變及(ji)變頻(pin)等電子電路中(zhong)(zhong)，是典型的(de)小電流(liu)控制大(da)電流(liu)的(de)設備。1957年，美國通(tong)用電器公司開(kai)(kai)發出世界上個晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)產品，并于(yu)1958年使其(qi)商業化。結構/晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)編(bian)輯(ji)晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)它是由一個P-N-P-N四(si)層(4layers)半導(dao)體(ti)構成的(de)，中(zhong)(zhong)間(jian)形成了(le)三個PN結。分(fen)類/晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)編(bian)輯(ji)晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)按其(qi)關斷(duan)、導(dao)通(tong)及(ji)控制方(fang)式可分(fen)為(wei)普(pu)通(tong)晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)（SCR）、雙向晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)（TRIAC）、逆導(dao)晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)（RCT）、門(men)極(ji)(ji)關斷(duan)晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)（GTO）、BTG晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)、溫控晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)（TT國外，TTS國內）和(he)(he)光(guang)控晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)（LTT）等多種。晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)按其(qi)引腳和(he)(he)極(ji)(ji)性(xing)可分(fen)為(wei)二極(ji)(ji)晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)、三極(ji)(ji)晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)和(he)(he)四(si)極(ji)(ji)晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)。晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)按其(qi)封裝形式可分(fen)為(wei)金屬封裝晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)、塑封晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)和(he)(he)陶瓷(ci)封裝晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)三種類型。其(qi)中(zhong)(zhong)，金屬封裝晶(jing)(jing)(jing)(jing)(jing)閘(zha)(zha)(zha)(zha)管(guan)(guan)又分(fen)為(wei)螺栓形、平板形、圓殼形等多種。

如(ru)果把左邊從下往上(shang)看(kan)的(de)(de)(de)(de)(de)p1—N1—P2—N2部分叫做正(zheng)向(xiang)(xiang)(xiang)的(de)(de)(de)(de)(de)話，那么右邊從下往上(shang)看(kan)的(de)(de)(de)(de)(de)N3—P1—N1—P2部分就成(cheng)為反(fan)向(xiang)(xiang)(xiang)，它(ta)們(men)之(zhi)間(jian)正(zheng)好是一(yi)(yi)(yi)(yi)(yi)(yi)正(zheng)一(yi)(yi)(yi)(yi)(yi)(yi)反(fan)地并(bing)聯(lian)在(zai)一(yi)(yi)(yi)(yi)(yi)(yi)起。我們(men)把這(zhe)種聯(lian)接叫做反(fan)向(xiang)(xiang)(xiang)并(bing)聯(lian)。因(yin)(yin)此(ci)(ci)，從電路功(gong)能上(shang)可(ke)以(yi)把它(ta)等效成(cheng)圖3(c)，也就是說(shuo)，一(yi)(yi)(yi)(yi)(yi)(yi)個(ge)(ge)(ge)雙(shuang)(shuang)向(xiang)(xiang)(xiang)晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)在(zai)電路中的(de)(de)(de)(de)(de)作(zuo)(zuo)用是和兩只普通(tong)(tong)晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)反(fan)向(xiang)(xiang)(xiang)并(bing)聯(lian)起來(lai)(lai)等效的(de)(de)(de)(de)(de)。這(zhe)也正(zheng)是雙(shuang)(shuang)向(xiang)(xiang)(xiang)晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)為什(shen)么會有(you)雙(shuang)(shuang)向(xiang)(xiang)(xiang)控(kong)(kong)制(zhi)導(dao)通(tong)(tong)特(te)性的(de)(de)(de)(de)(de)根本原因(yin)(yin)。雙(shuang)(shuang)向(xiang)(xiang)(xiang)晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)不(bu)象普通(tong)(tong)晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)那樣，必(bi)須在(zai)陽極(ji)(ji)和陰(yin)極(ji)(ji)之(zhi)間(jian)加(jia)上(shang)正(zheng)向(xiang)(xiang)(xiang)電壓，管(guan)(guan)(guan)(guan)(guan)子(zi)(zi)(zi)才能導(dao)通(tong)(tong)。對(dui)(dui)雙(shuang)(shuang)向(xiang)(xiang)(xiang)晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)來(lai)(lai)說(shuo)，無(wu)所謂陽極(ji)(ji)和陰(yin)極(ji)(ji)。它(ta)的(de)(de)(de)(de)(de)任何一(yi)(yi)(yi)(yi)(yi)(yi)個(ge)(ge)(ge)主電極(ji)(ji)，對(dui)(dui)圖3(b)中的(de)(de)(de)(de)(de)兩個(ge)(ge)(ge)晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)管(guan)(guan)(guan)(guan)(guan)子(zi)(zi)(zi)來(lai)(lai)講，對(dui)(dui)一(yi)(yi)(yi)(yi)(yi)(yi)個(ge)(ge)(ge)管(guan)(guan)(guan)(guan)(guan)子(zi)(zi)(zi)是陽極(ji)(ji)，對(dui)(dui)另(ling)一(yi)(yi)(yi)(yi)(yi)(yi)個(ge)(ge)(ge)管(guan)(guan)(guan)(guan)(guan)子(zi)(zi)(zi)就是陰(yin)極(ji)(ji)，反(fan)過來(lai)(lai)也一(yi)(yi)(yi)(yi)(yi)(yi)樣。因(yin)(yin)此(ci)(ci)，雙(shuang)(shuang)向(xiang)(xiang)(xiang)晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)無(wu)論主電極(ji)(ji)加(jia)上(shang)的(de)(de)(de)(de)(de)是正(zheng)向(xiang)(xiang)(xiang)或是反(fan)向(xiang)(xiang)(xiang)電壓，它(ta)都(dou)(dou)能被(bei)觸發(fa)導(dao)通(tong)(tong)。不(bu)*如(ru)此(ci)(ci)，雙(shuang)(shuang)向(xiang)(xiang)(xiang)晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)還有(you)一(yi)(yi)(yi)(yi)(yi)(yi)個(ge)(ge)(ge)重(zhong)要的(de)(de)(de)(de)(de)特(te)點，這(zhe)就是：不(bu)管(guan)(guan)(guan)(guan)(guan)觸發(fa)信號的(de)(de)(de)(de)(de)極(ji)(ji)性如(ru)何，也就是不(bu)管(guan)(guan)(guan)(guan)(guan)所加(jia)的(de)(de)(de)(de)(de)觸發(fa)信號電壓UG對(dui)(dui)T1是正(zheng)向(xiang)(xiang)(xiang)還是反(fan)向(xiang)(xiang)(xiang)，雙(shuang)(shuang)向(xiang)(xiang)(xiang)晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)都(dou)(dou)能被(bei)觸發(fa)導(dao)通(tong)(tong)。雙(shuang)(shuang)向(xiang)(xiang)(xiang)晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)的(de)(de)(de)(de)(de)這(zhe)個(ge)(ge)(ge)特(te)點是普通(tong)(tong)晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)所沒有(you)的(de)(de)(de)(de)(de)。快速晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)普通(tong)(tong)晶閘(zha)(zha)(zha)(zha)管(guan)(guan)(guan)(guan)(guan)不(bu)能在(zai)較高的(de)(de)(de)(de)(de)頻率下工作(zuo)(zuo)。因(yin)(yin)為器件的(de)(de)(de)(de)(de)導(dao)通(tong)(tong)或關斷需要一(yi)(yi)(yi)(yi)(yi)(yi)定時(shi)間(jian)，同時(shi)陽極(ji)(ji)電壓上(shang)升速度太快時(shi)，會使元件誤導(dao)通(tong)(tong)；陽極(ji)(ji)電流上(shang)升速度太快時(shi)，會燒毀元件。一(yi)(yi)(yi)(yi)(yi)(yi)般(ban)把5安培(pei)以(yi)下的(de)(de)(de)(de)(de)可(ke)控(kong)(kong)硅(gui)叫小功(gong)率可(ke)控(kong)(kong)硅(gui)，50安培(pei)以(yi)上(shang)的(de)(de)(de)(de)(de)可(ke)控(kong)(kong)硅(gui)叫大功(gong)率可(ke)控(kong)(kong)硅(gui)。

電容的作用是什么？

電(dian)(dian)容主(zhu)要由兩塊正(zheng)負(fu)電(dian)(dian)極和(he)夾在中間的(de)絕(jue)緣介質組(zu)成，其(qi)(qi)結構相(xiang)對來說是(shi)比較簡單的(de)。所以，電(dian)(dian)容的(de)類型就是(shi)由電(dian)(dian)極和(he)絕(jue)緣介質決定的(de)，其(qi)(qi)用途非常(chang)普遍。

電容主要三種作用：

電(dian)容(rong)一(yi)(yi)般指電(dian)容(rong)器(qi)，它(ta)的(de)三(san)種主要作用是耦(ou)合、濾波和(he)退耦(ou)。電(dian)容(rong)器(qi)是儲(chu)存電(dian)量和(he)電(dian)能的(de)元件。一(yi)(yi)個(ge)導(dao)體(ti)被另(ling)一(yi)(yi)個(ge)導(dao)體(ti)所包圍，或者(zhe)由(you)一(yi)(yi)個(ge)導(dao)體(ti)發出(chu)的(de)電(dian)場線全部終(zhong)止在(zai)另(ling)一(yi)(yi)個(ge)導(dao)體(ti)的(de)導(dao)體(ti)系(xi)，稱為電(dian)容(rong)器(qi)。

1、耦(ou)合：用在耦(ou)合電(dian)(dian)路中的電(dian)(dian)容稱為耦(ou)合電(dian)(dian)容，在阻容耦(ou)合放大器(qi)和其(qi)他電(dian)(dian)容耦(ou)合電(dian)(dian)路中大量使用這種(zhong)電(dian)(dian)容電(dian)(dian)路，起隔(ge)直流(liu)通交流(liu)作用。

2、濾波(bo)(bo)(bo)：用在濾波(bo)(bo)(bo)電(dian)路(lu)中的(de)電(dian)容器(qi)稱為濾波(bo)(bo)(bo)電(dian)容，在電(dian)源濾波(bo)(bo)(bo)和(he)各(ge)種濾波(bo)(bo)(bo)器(qi)電(dian)路(lu)中使(shi)用這(zhe)種電(dian)容電(dian)路(lu)，濾波(bo)(bo)(bo)電(dian)容將一(yi)定頻段內的(de)信(xin)號從總信(xin)號中去除。

3、退(tui)耦(ou)(ou)(ou)(ou)：用(yong)在退(tui)耦(ou)(ou)(ou)(ou)電(dian)(dian)(dian)(dian)(dian)(dian)路中(zhong)的(de)電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)器(qi)(qi)稱(cheng)為(wei)退(tui)耦(ou)(ou)(ou)(ou)電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)，在多(duo)級放(fang)大器(qi)(qi)的(de)直流電(dian)(dian)(dian)(dian)(dian)(dian)壓供給電(dian)(dian)(dian)(dian)(dian)(dian)路中(zhong)使用(yong)這種電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)電(dian)(dian)(dian)(dian)(dian)(dian)路，退(tui)耦(ou)(ou)(ou)(ou)電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)消除每(mei)級放(fang)大器(qi)(qi)之(zhi)間(jian)的(de)有害低(di)頻交連(lian)。兩(liang)個(ge)(ge)相互靠近的(de)導體，中(zhong)間(jian)夾一層(ceng)不導電(dian)(dian)(dian)(dian)(dian)(dian)的(de)絕緣介質(zhi)，這就(jiu)構成了電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)器(qi)(qi)。當電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)器(qi)(qi)的(de)兩(liang)個(ge)(ge)極板(ban)之(zhi)間(jian)加上電(dian)(dian)(dian)(dian)(dian)(dian)壓時，電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)器(qi)(qi)就(jiu)會儲存電(dian)(dian)(dian)(dian)(dian)(dian)荷(he)。電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)器(qi)(qi)的(de)電(dian)(dian)(dian)(dian)(dian)(dian)容(rong)量在數值(zhi)上等于一個(ge)(ge)導電(dian)(dian)(dian)(dian)(dian)(dian)極板(ban)上的(de)電(dian)(dian)(dian)(dian)(dian)(dian)荷(he)量與(yu)兩(liang)個(ge)(ge)極板(ban)之(zhi)間(jian)的(de)電(dian)(dian)(dian)(dian)(dian)(dian)壓之(zhi)比。晶(jing)(jing)閘管分為(wei)螺栓形和平(ping)板(ban)形兩(liang)種。江蘇igbt驅動(dong)開關可(ke)控(kong)硅（晶(jing)(jing)閘管）原廠原盒

可(ke)控硅(gui)是可(ke)控硅(gui)整流(liu)元件的簡稱(cheng),是一種具有三個(ge)PN 結的四層結構(gou)的大功率半導(dao)體(ti)器件。甘肅半導(dao)體(ti)igbt可(ke)控硅(gui)（晶閘管）semikron西門康全(quan)新(xin)原裝(zhuang)現貨

這對(dui)晶(jing)(jing)閘(zha)管是非常危險的(de)(de)(de)(de)(de)。開(kai)(kai)關引起(qi)的(de)(de)(de)(de)(de)沖(chong)擊電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)分(fen)(fen)為(wei)(wei)以下幾類：（1）AC電(dian)(dian)(dian)(dian)(dian)源被切斷(duan)(duan)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)而產(chan)(chan)生(sheng)例如，交(jiao)流(liu)(liu)(liu)以及開(kai)(kai)關的(de)(de)(de)(de)(de)開(kai)(kai)閉(bi)(bi)、交(jiao)流(liu)(liu)(liu)側熔(rong)斷(duan)(duan)器(qi)的(de)(de)(de)(de)(de)熔(rong)斷(duan)(duan)等引起(qi)的(de)(de)(de)(de)(de)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)，這些系統過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)問(wen)題由(you)(you)于(yu)我國變壓(ya)(ya)(ya)(ya)(ya)器(qi)內(nei)部繞組的(de)(de)(de)(de)(de)分(fen)(fen)布進(jin)行電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)、漏抗(kang)造成(cheng)的(de)(de)(de)(de)(de)諧振(zhen)(zhen)控(kong)制回(hui)路、電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)分(fen)(fen)壓(ya)(ya)(ya)(ya)(ya)等使(shi)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)數(shu)值(zhi)(zhi)為(wei)(wei)正常值(zhi)(zhi)的(de)(de)(de)(de)(de)2至10多倍。一般(ban)地，開(kai)(kai)閉(bi)(bi)運動速度越(yue)(yue)來越(yue)(yue)快(kuai)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)能(neng)(neng)力(li)越(yue)(yue)高(gao)，在空載(zai)情(qing)況下可以斷(duan)(duan)開(kai)(kai)回(hui)路設計(ji)將會有(you)更高(gao)的(de)(de)(de)(de)(de)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)。（2）直流(liu)(liu)(liu)側產(chan)(chan)生(sheng)的(de)(de)(de)(de)(de)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)如果截(jie)止電(dian)(dian)(dian)(dian)(dian)路的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)感很大或者截(jie)止電(dian)(dian)(dian)(dian)(dian)路的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)值(zhi)(zhi)很大，就(jiu)會產(chan)(chan)生(sheng)較大的(de)(de)(de)(de)(de)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)。這種情(qing)況經常出(chu)現在切斷(duan)(duan)負荷、導通晶(jing)(jing)閘(zha)管開(kai)(kai)路或快(kuai)速熔(rong)斷(duan)(duan)器(qi)熔(rong)斷(duan)(duan)時，引起(qi)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)突變。（3）換相沖(chong)擊電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)包括換相過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)和(he)換相振(zhen)(zhen)蕩(dang)(dang)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)。換相過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)是由(you)(you)于(yu)晶(jing)(jing)閘(zha)管的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)降(jiang)為(wei)(wei)0時器(qi)件(jian)內(nei)部各結(jie)層殘存載(zai)流(liu)(liu)(liu)子復合所產(chan)(chan)生(sheng)的(de)(de)(de)(de)(de)，所以又叫載(zai)流(liu)(liu)(liu)子積蓄效(xiao)應引起(qi)的(de)(de)(de)(de)(de)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)。換相過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)之后，出(chu)現換相振(zhen)(zhen)蕩(dang)(dang)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)，它是由(you)(you)于(yu)電(dian)(dian)(dian)(dian)(dian)感、電(dian)(dian)(dian)(dian)(dian)容(rong)(rong)(rong)形成(cheng)共振(zhen)(zhen)產(chan)(chan)生(sheng)的(de)(de)(de)(de)(de)振(zhen)(zhen)蕩(dang)(dang)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)，其值(zhi)(zhi)與換相結(jie)束后的(de)(de)(de)(de)(de)反向(xiang)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)有(you)關。反向(xiang)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)越(yue)(yue)高(gao)，換相振(zhen)(zhen)蕩(dang)(dang)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)也越(yue)(yue)大。針對(dui)形成(cheng)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)的(de)(de)(de)(de)(de)不(bu)同(tong)原(yuan)因(yin)，可以采取不(bu)同(tong)的(de)(de)(de)(de)(de)抑制方(fang)法(fa)，如減少過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)源，并使(shi)過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)幅(fu)值(zhi)(zhi)衰減；抑制過(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)(ya)(ya)能(neng)(neng)量上升的(de)(de)(de)(de)(de)速率，延緩已產(chan)(chan)生(sheng)能(neng)(neng)量的(de)(de)(de)(de)(de)消散(san)速度，增加其消散(san)的(de)(de)(de)(de)(de)途徑。甘肅半(ban)導體(ti)igbt可控(kong)硅（晶(jing)(jing)閘(zha)管）semikron西(xi)門(men)康全新原(yuan)裝現貨

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